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Tantalum nitride (TaN) is a chemical compound, a nitride of tantalum. There are multiple phases of compounds, stoichimetrically from Ta 2 N to Ta 3 N 5, including TaN. As a thin film TaN find use as a diffusion barrier and insulating layer between copper interconnects in the back end of line of computer chips. Tantalum nitrides are also used in ...
Jun 7, 2022 · TaN thin films were grown on silicon substrates at a constant temperature. The resulting films were analyzed by atomic force microscopy (AFM), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), x-ray diffraction (XRD) and resistance vs. temperature (R-T) techniques.
Oct 1, 2005 · TaN films with high mechanical hardness are preferred for head fabrication during lapping process. The mechanical and electrical properties of deposited tantalum nitride films have been found to vary in a wide range depending on their deposition techniques.
Feb 1, 2024 · Polycrystalline δ-TaN thin films were prepared by reactive sputtering and characterized by XRD, Raman spectroscopy and XPS. The crystal structure, ionic chemical state phases of TaN, and the temperature dependence of the resistivity of tantalum at different nitrogen partial pressures during sputtering were analyzed.
A series of Tantalum Nitride (TaN) films under a reactive direct current magnetron sputtering method with a controlled total gas flow rate were prepared on aluminum oxide substrates.
Feb 12, 2004 · The structural evolution of tantalum nitride (TaN) films deposited by reactive rf magnetron sputtering were investigated in detail by using transmission electro.
recording. We synthesized two series of Ta-N films on glass and Si substrates by using reactive radio frequency sputtering under 5 mtorr Ar/N2 processing pressure with varied N2 partial pressure, and carried out systematical characterization analyses of the films. We observed clear changes of phases in the films from metallic bcc Ta to a ...
