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  1. Etching can be characterized by how much of the process is: Chemical: Using the chemistry of the etch to remove material into a solution (liquid or gaseous solution) Sputtering: In plasma systems, Ions can be accelerated fast enough so as to “Ram” into the surface, “knocking out”

  2. In wafer fabrication, chemical etching is used for lapping and polishing to give an optically flat, damage-free surface. Prior to thermal oxidation or epitaxial growth, wafers are chemically cleaned and scrubbed to remove contamination that results from handling and storing.

  3. 7.1: A plasma etch process can be described with the following terms: Etch RateSelectivity -Anisotropy – Uniformity A plasma etch tool has the following process parameters: Pressure, Temperature, Gas composition, Gas flow, Substrate bias, RF power. Which of the following statements are true: A. Pressure affects anisotropy and rate.

  4. Feb 3, 2010 · To release mechanical components, etch is used to remove whatever material is necessary to allow the component to operate according to design. The component may be required to move up/down or side-to-side, rotate, vibrate, bend or flex. It may need to be suspended over.

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  5. Before going into the specifi c issues such as the wet-chemical etching of certain substances, in the following chapters, this chapter would like to fi rst explain the appropriate chemical basics of acids, bases and the princi-ple etching mechanism for a better understanding. corresponds to a pH-value of 7.

  6. Jul 3, 2017 · Look up definitions of chemistry words in this comprehensive A to Z chemistry dictionary. The glossary is organized alphabetically.

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  8. • What is dry etching? – Material removal reactions occur in the gas phase. • Why dry etching? • Development of dry etching • Plasma parameters/influences. BOSCH Patent STS, Alcatel, Trion, Oxford Instruments ...

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