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Etching can be characterized by how much of the process is: Chemical: Using the chemistry of the etch to remove material into a solution (liquid or gaseous solution) Sputtering: In plasma systems, Ions can be accelerated fast enough so as to “Ram” into the surface, “knocking out” atoms/molecules
get selectivity due to chemical component and chemical reactions. A plasma etch tool has the following process parameters: Pressure, Temperature, Gas composition, Gas flow, Substrate bias, RF power. Pressure affects anisotropy and rate.
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Wet chemical etching is employed in various processing steps. In wafer fabrication, chemical etching is used for lapping and polishing to give an optically flat, damage-free surface. Prior to thermal oxidation or epitaxial growth, wafers are chemically cleaned and scrubbed to remove contamination
Etching in solution comprises a heterogeneous chemical reaction in which an etchant reacts with a solid and oxidizes it to produce a soluble reaction product. It is important to note that if the reaction product were to be insoluble in the etch-ant, then the reaction would stop and etching would cease.
Etching can be classified as deep or superficial (frosting or satinizing). Deep-etching con stitutes a chemical forming process, e.g. profiling or perforating. In super ficial etching, very little material is removed; a contrast-effect is obtained through the roughing action of the etching agent.
Etching is used in microfabrication to chemically remove layers (metal, photoresist or other semiconductor materials) from the surface of a wafer during manufacturing. In principle, the orientation of crystalline materials determines their optical, electrical, and mechanical properties.
• What is dry etching? – Material removal reactions occur in the gas phase. • Why dry etching? • Development of dry etching • Plasma parameters/influences. BOSCH Patent STS, Alcatel, Trion, Oxford Instruments ...
