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Jun 22, 2020 · Expertise include data analysis and ML algorithm implementation using python. · Experience: Intel Corporation · Location: Storrs · 500+ connections on LinkedIn. View Raihan Sayeed Khan, PhD’s...
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6. Raihan Sayeed Khan, PhD. 2y Edited. I have joined Intel Corporation as NVM Reliability R&D Engineer. After working on non-volatile memory technology during my PhD, I believe this is a...
I am Raihan Sayeed Khan, Product Development Engineer at Intel. I received my PhD in Electrical Engineering from University of Connecticut in 2021. I completed my BSc in Electrical and Electronic Engineering (EEE) from Bangladesh University of Engineering and Technology (BUET) in 2014.
Raihan Sayeed Khan; High precision and reliable wind speed forecasting is a challenge for meteorologists. We used multiple nonparametric tree-based machine learning techniques, for predicting the ...
R. S. Khan et al. “Effect of Optical Illumination on Resistance Drift in Ge2Sb2Te5 Line Cells”; MRS Spring Meeting 2020. R. S. Khan et al. “Low Temperature Characterization of Resistance Drift in Amorphous Ge2Sb2Te5”; MRS Fall Meeting 2019. R. S. Khan et al. “Low Temperature Resistance Drift in Ge2Sb2Te5 and Contribution of Charge ...
Dec 6, 2023 · Presentation History. 2024 MRS Fall Meeting & Exhibit. Stopping Resistance Drift in Reset Ge 2 Sb 2 Te 5 Phase Change Memory Cells—Field-Induced Charge Relaxation and Electronic Transport. Dec 4, 2024, 11:00 AM. 2024 MRS Fall Meeting & Exhibit. Electronic Transport in Sub-100 nm Reset Phase Change Memory Line-Cells. Dec 4, 2024, 9:45 AM.
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Modeling of multi-contact phase change logic devices (flip-flop and multiplexer) and effect of scaling.. Modeling the effect of nucleation on resistance drift in phase change memory devices